Publications

6. Low Power Electronics for Harsh Radiation Environment

Prinzie J, Simanjuntak FM, Leroux P, Prodromakis T (2021) Nature Electronics 4:243–253. doi: 10.1038/s41928-021-00562-4

(first-authored equal contribution)

5. Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next generation devices: A review

Amrillah T., Hermawan A, Wulandari CP, Muthi'ah AD, Simanjuntak FM (2021) Mater. Manuf. Process. doi: 10.1080/10426914.2021.1945096

4. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Simanjuntak FM, Panda D, Wei K, Tseng T-Y (2016) Nanoscale Res Lett 11:368. doi: 10.1186/s11671-016-1570-y

Review Articles & Book Chapters

3. Chapter 8: Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

Simanjuntak FM,* Chandrasekaran S, Panda D, Salem A, Prodromakis T (2021). IntechOpen Invited Article In: Memristors (ISBN 978-1-83968-957-4) doi: 10.5772/intechopen.98607

2. Chapter 13: Perovskite-based emerging memories

Simanjuntak FM,* Amrillah T, Jalaluddeen AS, Bipin V, Garlapati SK (2022) Elsevier. In: Perovskite Ceramics: Recent Advances and Emerging Applications (ISBN 978-0-323-90586-2)

1. Chapter 14: Perovskite-based light-emitting diodes

Simatupang JW, Simanjuntak FM, Tyler DJ (2022) Elsevier. In: Perovskite Ceramics: Recent Advances and Emerging Applications (ISBN 978-0-323-90586-2)

Research Papers

Journal Articles

86 Juliano H., Limantoro S.E., Simanjuntak F.M.*, Tseng T-Y. (2025) Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application. APL Mater. 13, 051112 (2025)

85 Hajiabadi Z., Purnama I., Nugroho A., Chao H., Chandrasekaran S., Mukhtar H., Georgiadou DG., Chong HMH., Thomas DB., Simanjuntak FM* (2025) ZnO-based memristor for random number generator: The case of current compliance. Electron. Lett. 61(1):e70165. doi: 10.1049/ell2.70165

84 Gao S., Chandrasekaran S., Purnama I., Simanjuntak FM* (2024) Feasibility study of analogue filters based on memristor. The Journal of Engineering (11). doi: 10.1049/tje2.70028

83 Prasad O. K., Chandrasekaran S., Napari M., Purnama I., Nugroho A., Georgiadou D., Chung C-H, Chang K-M, Simanjuntak FM* (2024) γ-ray-induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications. IEEE Electron Device Lett. 45(11):2082. doi: 10.1109/LED.2024.3454294

82 Roy S., Napari M., Georgiadou D.G., Chandrasekaran S., Chakrabarti B., Simanjuntak F.M.* (2024) High-Performance TiN/TaO/TiN Selectors With Short-Term Memory Characteristics. IEEE Trans. Electron Devices. 71(9):5775. doi: 10.1109/TED.2024.3422949

81 Garlapati S.K., Simanjuntak F.M., Stathopoulos S., Napari M., Prodromakis T. (2024) Compliance-free, analog RRAM devices based on SnOx. Sci. Rep. 14(1):14163. doi: 10.1038/s41598-024-64662-9

80 Napari M, Stathopoulos S, Prodromakis T, Simanjuntak FM* (2024) Forming-Free and Non-linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface-Induced Internal Resistance. Electron. Mater. Lett. doi: 10.1007/s13391-023-00481-w

79 Frechilla A, Napari M, Strkalj N, Barriuso1E, Niang K, Hellenbrand M, Štrichovanec P, Simanjuntak FM, Flewitt A, Magén C, Fuente GFdl, MacManus-Driscoll JL, Angurel LA, and Pardo JA (2024) Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing. Appl. Mater. Today 36:102033. doi: 10.1016/j.apmt.2023.102033

78 Prasad OK, Chandrasekaran S, Chung C-H, Chang K-W, Simanjuntak FM* (2022) Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing. Appl. Phys. Lett. 121(23):233505. doi: 10.1063/5.0123583

77 Pattanayak B, Phuoc-Anh Le, Panda D, Simanjuntak FM, Wei K-H, Winie T, Tseng T-Y (2022) Ion accumulation-induced capacitance evelation in a microporous graphene-based supercapacitor. RSC Adv. 12:27082. doi: 10.1039/D2RA04194D

76 Simanjuntak FM, Ohno T, Minami K, Samukawa S. (2022) Transparent ZnO Resistive Switching Memory Fabricated by Neutral Oxygen Beam Treatment. Jpn. J. Appl. Phys. 61:SM1010. doi:10.35848/1347-4065/ac762e

75 Amrillah T, Duong MN, Chen Y-X, Bitla Y, Baqiya Malik, Sari FI, Le TQ, Hermawan A, Simanjuntak FM, Chen C-H, Wu K-H, Juang J-Y. (2022) Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substrates. ACS Appl. Electron. Mater. 4 (4): 1603. doi: 10.1021/acsaelm.1c01284

74 Simanjuntak FM,* Panidi J, Talbi F, Kerrigan A, Lazarov V.K., Prodromakis T (2022) Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices APL Materials 10: 031103. doi:10.1063/5.0076903

73 Singh P, Simanjuntak FM,* Hu L-L, Tseng T-Y, Zan H-W, Chu JP (2022) Ambient Dependent Performance of ZnO-nanorods Based Nitric Oxide Gas Sensor. Sensors 22(1):390. doi:10.3390/s22010390

72 Simanjuntak FM, Hsu C-L, Abbey T., Chang L-Y, Prodromakis T, Tseng T-Y (2021) Conduction Channel Configuration Controlled Digital and Analog Response in TiO2-based Inorganic Memristive Artificial Synapses. APL Materials 9:121103. doi: 10.1063/5.0067302

71 Rajasekaran S, Simanjuntak FM, Chandrasekaran S, Panda D, Saleem A, Tseng T-Y (2021) Flexible Ta2O5/WO3 Based Synaptic Memristor for Wearable and Neuromorphic Applications. IEEE EDL 43(1):9. doi:10.1109/LED.2021.3127489

70 Simanjuntak FM, Panda D, Chandrasekaran S, Aluguri R, Lin C-C, Tseng T-Y (2021) Evaluating Gallium-doped ZnO Top Electrode Thickness for Achieving a Good Switch-Ability in ZnO2/ZnO Bilayer Transparent Valence Change Memory. J Electroceram 46:14–19. doi: 10.1007/s10832-021-00239-6

69 Simanjuntak FM, Chandrasekaran S, Panda D, Rajasekaran S, Rullyani C, Madhaiyan G, Prodromakis T, Tseng T-Y (2021) Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure. Appl. Phys. Lett. Editor's Pick Article 118:173502 doi: 10.1063/5.0047036

68 Saleem A, Simanjuntak FM, Chandrasekaran S, Rajasekaran S, Tseng T-Y, Prodromakis T, Lin A (2021) Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications. Appl. Phys. Lett. 118:112103. doi: 10.1063/5.0041808

67 Taufiq A, Saputro RE, Susanto H, Hidayat N, Sunaryono S, Amrillah T, Wijaya HW, Mufti N, Simanjuntak FM (2020) Synthesis of Fe3O4/Ag nanohybrid ferrofluids and their applications as antimicrobial and antifibrotic agents. Heliyon 6:12(E05813). doi: 10.1016/j.heliyon.2020.e05813

66 Panda D, Simanjuntak FM,# Chandrasekaran S, Pattanayak, Singh P, Tseng T-Y (2020) Barrier Layer Induced Switching Stability in Ga:ZnO Nanorods Based Electrochemical Metallization Memory. IEEE Trans. Nanotechnology 19:764. doi: 10.1109/TNANO.2020.3029588

65 Chang L-Y, Simanjuntak FM,* Hsu C-L, Chandrasekaran S, Tseng T-Y (2020) Suboxide interface induces digital-to-analog switching transformation in all Ti-based memristor devices. Appl. Phys. Lett. Featured Article 117:073504. doi: 10.1063/5.0014829

64 Rajasekaran S, Simanjuntak FM, Panda D, Chandrasekarang S, Aluguri R, Saleem A, Tseng T-Y. (2020) A Fast, Highly Flexible and Transparent TaOx-based Environmentally Robust Memristor for Wearable and Aerospace Application. ACS Appl. Electron. Mater. 2(10):3131. doi: 10.1021/acsaelm.0c00441

63 Singh P, Simanjuntak FM, Wu Y-C, Kumar A, Zan H-W, Tseng T-Y (2020) Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers. J. Mater. Sci. 55:8850. doi: 10.1007/s10853-020-04659-7

62 Darmadi BD, Gapsari F, Lobo OB, Simanjuntak FM* (2020) Stress Corrosion Cracking Threshold for Dissimilar Capacitive Discharge Welding Joint with Varied Surface Geometry. Applied Science Invited Article 10(6): 2180. doi: 10.3390/app10062180

61 Simanjuntak FM, Ohno T, Chandrasekaran S, Tseng T-Y, Samukawa S (2020) Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications. Nanotechnology 31:26LT01. doi: 10.1088/1361-6528/ab7fcf

60 Amrillah T, Chen Y-X, Duong MN, Abdussalam W, Simanjuntak FM, Chen C-H, Chu Y-H, Juang J-Y (2020) Effects of pillar size modulation on the magnetostructural coupling in self-assembled BiFeO3-CoFe2O4 heteroepitaxy. CrystEngComm 22:435. doi: 10.1039/c9ce01573f

59 Pattanayak B, Simanjuntak FM, Panda D, Yang C-C, Kumar A, Le P-A, Wei K-H, Tseng T-Y (2019) Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor. Sci. Rep. 9:1. doi: 10.1038/s41598-019-53364-2

58 Simanjuntak FM,* Ohno T, Samukawa S. (2019) Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering pressure dependency. ACS Appl. Electron. Mater. 1:11. doi: 10.1021/acsaelm.9b00617

57 Simanjuntak FM,* Ohno T, Samukawa S. (2019) Influence of rf sputter power on ZnO film characteristics for transparent memristor devices. AIP Adv. 9:10. doi: 10.1063/1.5125665

56 Chandrasekaran S, Simanjuntak FM, Panda D, Tseng T-Y (2019) Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme. IEEE Trans Electron Devices 66(11): 472. doi: 10.1109/TED.2019.2941764

55 Gapsari F, Madurani KA, Simanjuntak FM, Andoko A, Wijaya H, Kurniawan F (2019) Corrosion Inhibition of Honeycomb Waste Extracts for 304 Stainless Steel in Sulfuric Acid Solution. Materials 12(13):2120. doi:10.3390/ma12132120

54 Chandrasekaran S, Simanjuntak FM, Saminathan R, Panda D, Tseng T-Y (2019) Improving linearity by introducing Al in HfO2 as memristor synapse device. Nanotechnology 6:107. doi: 10.1088/1361-6528/ab3480

53 Simanjuntak FM, Chandrasekaran S, Lin C-C., Tseng T-Y (2019) ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices. APL Mater. 7:051108. doi: 10.1063/1.5092991

52 Simanjuntak FM,* Ohno T, Samukawa S. (2019) Neutral Oxygen Beam-Treated ZnO-Based Resistive Switching Memory Device. ACS Appl. Electron. Mater. 1:18. doi: 10.1021/acsaelm.8b00055

51 Simanjuntak FM, Chandrasekaran S, Lin C-C., Tseng T-Y (2018) Switching Failure Mechanism in Zinc Peroxide-based Programmable Metallization Cell. Nanoscale Res Lett 13:327. doi: 10.1186/s11671-018-2743-7

50 Chandrasekaran S, Simanjuntak FM, Aluguri R, Tseng T (2018) The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices. Thin Solid Films 660:777–781. doi: 10.1016/j.tsf.2018.03.065

49 Singh P, Simanjuntak FM, Kumar A, Tseng T (2018) Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory. Thin Solid Films 660:828–833 . doi: 10.1016/j.tsf.2018.03.027

48 Lumbantoruan F, Zheng X-X, Huang J-H, Huang R-Y, Simanjuntak FM, Chang E-Y, Tu Y-Y, Lee C-T (2018) Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD. J. Cryst. Growth 501:7–12 . doi: 10.1016/j.jcrysgro.2018.08.015

47 Chandrasekaran S, Simanjuntak FM, Tseng T (2018) Controlled resistive switching characteristics of ZrO2 -based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. Jpn. J. Appl. Phys 57:04FE10 . doi: 10.7567/JJAP.57.04FE10

46 Simanjuntak FM, Singh P, Chandrasekaran S, Lumbantoruan FJ, Yang C-C, Huang C-J, Lin C-C, Tseng T-Y (2017) Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell. Semicond Sci Technol 32:124003 . doi: 10.1088/1361-6641/aa9598

45 Simanjuntak FM, Chandrasekaran S, Pattanayak B, Lin C-C, Tseng T-Y (2017) Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. Nanotechnology 28:38LT02 . doi: 10.1088/1361-6528/aa80b4

44 Chandrasekaran S, Simanjuntak FM, Tsai T-L, Lin C-A, Tseng T-Y (2017) Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory. Appl. Phys. Lett. 111:113108 . doi: 10.1063/1.5003622

43 Aluguri R, Kumar D, Simanjuntak FM, Tseng T-Y (2017) One bipolar transistor selector - One resistive random access memory device for cross bar memory array. AIP Adv. 7:095118 . doi: 10.1063/1.4994948

42 Simanjuntak FM, Prasad OK, Panda D, Lin C-A, Tsai T-L, Wei K-H, Tseng T-Y (2016) Impacts of Co doping on ZnO transparent switching memory device characteristics. Appl. Phys. Lett. 108:183506 . doi: 10.1063/1.4948598

41 Panda D, Simanjuntak FM, Tseng T-Y (2016) Temperature induced complementary switching in titanium oxide resistive random access memory. AIP Adv. 6:075314 . doi: 10.1063/1.4959799

40 Simanjuntak FM, Panda D, Tsai T-L, Lin C-A, Wei K-H, Tseng T-Y (2015) Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. J. Mater. Sci. 50:6961–6969 . doi: 10.1007/s10853-015-9247-y

39 Simanjuntak FM, Panda D, Tsai T-L, Lin C-A, Wei K-H, Tseng T-Y (2015) Enhanced switching uniformity in AZO/ZnO 1−x /ITO transparent resistive memory devices by bipolar double forming. Appl. Phys. Lett. 107:033505 . doi: 10.1063/1.4927284

Conference Papers

38 Hidayatulloh P, Qolbiyah NS, Nugroho A, Mukhtar H, Purnama I, Simanjuntak FM (2024) Performance Evaluation of ESP32 Random Number Generator for LoRa Communication Security. IEEExplore. International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET). doi: 10.1109/ICRAMET62801.2024.10809333

37 Simanjuntak FM*, Talbi F., Kerrigan A., Lazarov VK., Prodromakis T (2022) Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications. IEEE Xplore. International Electronics Symposium: 171. doi: 10.1109/IES55876.2022.9888713

36 Simanjuntak FM, Chandrasekaran S, Prasad OK, Gapsari F, Prodromakis T, Tseng T-Y (2021) Conduction mechanism of Co-doped ZnO transparent memristive devices. IOP Conf. Ser.: Mater. Sci. Eng. 1034 012139. doi:10.1088/1757-899X/1034/1/012139

35 Panda D, Simanjuntak FM, Pradhan A, Gapsari F, Prodromakis T (2021) Band Tailoring by Annealing and Current Conduction of Co-Doped ZnO Transparent Resistive Switching Memory. IOP Conf. Ser.: Mater. Sci. Eng. 1034:012140. doi:10.1088/1757-899X/1034/1/012140

34 Chang L-Y, Simanjuntak FM, Gapsari F, Prodromakis T, Tseng T-Y (2021) ZrOx insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices. IOP Conf. Ser.: Mater. Sci. Eng. 1034:012142. doi:10.1088/1757-899X/1034/1/012142

33 Simanjuntak FM, Pattanayak B, Lin C-C, Tseng T-Y (2017) Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices. ECS Trans. 77:155–160 . doi: 10.1149/07704.0155ecst

32 Simanjuntak FM*, Chandrasekaran S, Gapsari F, Tseng T-Y (2019) Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device. IOP Conf Ser Mater Sci Eng 494:012027 doi:10.1088/1757-899X/494/1/012027

31 Noerochim L, Putra EAP, Susanti D, Simanjuntak FM, Rohmannudin TN, Subhan A, (2019) Synthesis and Electrochemical Performance of α-Fe2O3 Nano Ellipse as Anode for Lithium-Ion Batteries. Asian J Chem 31:487-492. doi: 10.14233/ajchem.2019.21629

30 Chou CC, Huang CF, Simanjuntak FM, Wu YY (2011) Electrospinning Processing and Microstructural Characterization of Ce0.78Gd0.2Sr0.02O2-δ Fiber for a Composite Anode. Adv Mat Res. 287–290:2489–2493 . doi: 10.4028/www.scientific.net/AMR.287-290.2489

Conference proceedings without DOI

29 Graham A, Hajiabadi Z, Wang A-H, Georgiadou DG, Huang R, and Simanjuntak FM (2025) Device variation effect simulation for SnOx memristor-based neural networks. In: 51st International Micro and Nano Engineering Conference. Southampton.

28 Hajiabadi Z, Graham A, Wang A-H, Napari M, Georgiadou DG, Thomas DB, Chong HMH, Simanjuntak FM (2025) Volatile threshold switching characteristics of TiN/TaOx/TiN selector devices. In: 51st International Micro and Nano Engineering Conference. Southampton.

27 Prasad OK, Chandrasekaran S, Wi C-H, Napari M, Georgiadou DG, Chang K-M, Simanjuntak FM (2024) Switching mechanism and reliability of y-ray irradiated Al-HfOx-based memristor devices. In: 10th International Conference on Technological Advances of Thin Films & Surface Coatings. Singapore

26 Madden C, Simanjuntak FM, Georgiadou DG (2023) Effect of Morphology in Perovskite-Based Resistive Memory Devices. In: Innovations in Large Area Electronics (InnoLAE). Cambridge.

25 Frechilla A, Napari M, Strkalj N, Barriuso1E, Niang K, Hellenbrand M, Štrichovanec P, Simanjuntak FM, Flewitt A, Magén C, Fuente GFdl, MacManus-Driscoll JL, Angurel LA, and Pardo JA (2023) Sub-nanosecond laser-induced crystallization of ferroelectric Hf0.5Zr0.5O2 films. In: E-MRS 2023 Fall. Warsaw

24 Wang A-H, Simanjuntak FM, Huang R, Chong MHH, Thomas DB (2023) Controllable Temporal Dynamics of Titanium Oxide Memristor for Analog Time- Based Reservoir Computing. In: 2023 International Conference on Solid State Devices & Materials. Nagoya.

23 Napari M, Simanjuntak FM, Stathopoulos, Prodromakis T (2022) Forming free non-linear resistive switching memory devices with ALD-grown HfOx/TaOx bilayers. In: 22nd International Conference on Atomic Layer Deposition (ALD/ALE2022). Ghent.

22 Minami K, Ohno T, Simanjuntak FM, Samukawa S (2021) Transparent ZnO Resistive Switching Memory Fabricated by Changing Sputter Condition and Neutral Oxygen Beam Treatment. In: MEMRISYS 2021. Online

21 Minami K, Ohno T, Simanjuntak FM, Samukawa S (2021) Fabrication of ZnO resistive switching memory using a transparent substrate. In: IEICE Tech. Rep. 2021 ISSN 0913-5685

20 Simanjuntak FM, Prodromakis T (2021) Role of metal barrier layer in switching characteristics of digitally switched ZnO-based electrochemical metallization cells. In: AIP Materials Challenges for Memory. Online

19 Garlapati SK, Simanjuntak FM, Stathopoulos S, Napari M, Prodromakis T (2021) Compliance-free, analog switching characteristics of SnOx-based memristors. In: AIP Materials Challenges for Memory. Online

18 Singh P, Simanjuntak FM, Chandrasekaran S, Panda D, Tseng T-Y (2019) Role of TiW barrier layer on resistive switching characteristic of ZnO-nanorods electrochemical metallization cell. In: SSDM 2019 International Thin Films Conference. Nagoya.

17 Simanjuntak FM, Ohno T, Samukawa S (2019) RF Sputtering Pressure Controlled Switching Characteristics of ZnO-based Flexible-Transparent Resistive Memory Devices. In: The 66th Japan Society of Applied Physics Meeting. Tokyo.

16 Singh P, Kumar A, Simanjuntak FM, Tseng T-Y (2018) Barrier layer thickness dependent resistive switching behavior of Conductive Bridge Random Access Memory . In: International Electron Devices & Materials Symposium. Keelung.

15 Simanjuntak FM, Ohno T, Samukawa S (2018) Sputtering Power Dependent on Switching Characteristics of ZnO-based Transparent Resistive Memory Devices. In: AVS 65th International Symposium & Exhibition. California.

14 Panda D, Kumar SS, Simanjuntak FM, Anand, A. Dash A. Tseng T-Y (2018) Annealing Effects in Structural and Electro-Optical Properties of Co Doped ZnO RRAM. In: International Conference on Microscope and XXXIX Annual Meeting of Electron Microscope Society of India. Odisha.

13 Simanjuntak FM, Ohno T, Samukawa S (2018) Conducting bridge RAM showing nonvolatile switching and oscillation characteristic. In: Kick-off Symposium for World Leading Research Centers, Sendai.

12 Simanjuntak FM, Ohno T, Samukawa S (2018) Enhanced Switching Behavior in ZnO-based Conducting Bridge Random Access Memory Devices by Neutral Oxygen Beam Surface Treatment. In: European Materials Research Societes 2018 Spring Meeting. Strasborg.

11 Simanjuntak FM, Ohno T, Samukawa S (2018) Neutral Oxygen Beam Surface Treatment Enabled Resistive Switching Characteristics in ZnO-based Conducting Bridge Random Access Memory. In: The 65th Japan Society of Applied Physics Meeting. Tokyo.

10 Simanjuntak FM, Panda D, Chandrasekaran S, Aluguri R, Lin C-C, Tseng T-Y (2018) Top Electrode Thickness Dependent on Switching Characteristics of ZnO2/ZnO Bilayer Transparent Resistive Random Access Memory Devices. In: International Conference on Microscope and XXXIX Annual Meeting of Electron Microscope Society of India. Odisha.

9 Chandrasekaran S, Simanjuntak FM, Tseng T-Y (2017) The effect of TiW thickness on non-polar to bipolar switching transformation in ZrO2-based CBRAM In: International Conference on Solid State Devices and Materials. Sendai.

8 Chandrasekaran S, Simanjuntak FM, Tseng T-Y (2017) Barrier layer thickness dependence in ECM to VCM transition in ZrO2-based RRAM. In: TACT2017 International Thin Films Conference. Hualien. Bronze Award

7 Singh P, Simanjuntak FM, Kumar A, Tseng T-Y (2017) Resistive Switching Characteristics of ZnO-nanorods Conducting Bridge Random Access. In: TACT2017 International Thin Films Conference. Hualien.

6 Simanjuntak FM, Chandrasekaran S, Lin C-C, Tseng T-Y (2017) The Effect of Peroxide Surface Oxidation on Resistive Switching Characteristics of ZnOx -based Conducting Bridge Random Access Memory Devices. In: TACT2017 International Thin Films Conference. Hualien.

5 Simanjuntak FM, Panda D, Chandrasekaran S, Aluguri R, Lin C-C, Tseng T-Y (2017) The Effect of Top Electrode Thickness on Switching Characteristics of Transparent Resistive Memory Devices. In: TACT 2017 International Thin Films Conference. Hualien.

4 Simanjuntak FM, Tseng T-Y (2016) Impact of Surface Modification of ITO Bottom Electrode on Switching Characteristics of ZnO-based Transparent Resistive Memory Devices Fabricated on Polymer Substrate. In: Nanotech France 2016 Conference and Exhibition. Paris.

3 Simanjuntak FM, Tseng T-Y (2016) Improved Switching Performance of ZnO-based Transparent Resistive Memory Devices by Controlling Microstructural and Defects Concentration with Co Doping. In: 4th International Conference on Nano and Materials Engineering (ICNME 2016). Denpasar.

2 Simanjuntak FM, Tseng T-Y (2015) Role of Top Electrode Growth Orientation on Switching Characteristics of AZO/ZnO/ITO Transparent Resistive Memory Devices. In: Materials Research Society - Japan. Yokohama.

1 Simanjuntak FM, Yeh T-H, Chou C-C (2011) Characterization and phase transformation behavior of electrospun 5 mol.% YNbO4 doped 3YSZ nano-fiber. In: International Union of Materials Research Societies - 12th International Conference in Asia. Taipei.